- Series :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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3,090
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ON Semiconductor | 650V 40A SIC SBD | - | Active | - | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.75V @ 20A | 200µA @ 650V | 1 Pair Common Cathode | 650V | 22A (DC) | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | |||
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1,558
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Infineon Technologies | DIODE SCHOTTKY 650V 16A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 1.7V @ 16A | 200µA @ 650V | 1 Pair Common Cathode | 650V | 16A (DC) | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | ||
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2,578
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Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-3 | TO-220 | Silicon Carbide Schottky | 1.8V @ 10A | 200µA @ 650V | 1 Pair Common Cathode | 650V | 17A | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C |
