- Manufacture :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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893
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
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1,541
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
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947
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
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2,689
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ON Semiconductor | 650V 10A SIC SBD | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 10A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz |
