- Series :
- Current - Reverse Leakage @ Vr :
10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,617
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Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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3,481
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Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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2,121
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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663
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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1,327
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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629
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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3,133
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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1,722
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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3,822
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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2,744
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | -55°C ~ 150°C | 60pF @ 4V, 1MHz |