- Manufacture :
- Part Status :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,273
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Microsemi Corporation | DIODE SIC 650V 46A TO247 | - | Obsolete | Bulk | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 46A | 1.8V @ 30A | 600µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 945pF @ 1V, 1MHz | ||
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3,012
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 99A | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 99A (DC) | 1.8V @ 30A | 600µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 2100pF @ 0V, 1MHz | ||
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1,359
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IXYS | DIODE GEN PURP 1.8KV 20A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 20A | 2.24V @ 20A | 50µA @ 1800V | 1800V | Fast Recovery = 200mA (Io) | 300ns | -55°C ~ 150°C | - | |||
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1,310
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 36A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 36A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 600pF @ 0V, 1MHz |