5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
S4PBHM3/86A
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RFQ
1,813
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A eSMP® Discontinued at Digi-Key Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 4A 1.1V @ 4A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 2.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
S4PBHM3/87A
GET PRICE
RFQ
3,194
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A eSMP® Discontinued at Digi-Key Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 4A 1.1V @ 4A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 2.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
S4PBHM3_A/I
Per Unit
$0.16
RFQ
1,515
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A Automotive, AEC-Q101, eSMP® Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 4A 1.1V @ 4A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 2.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
S4PB-M3/86A
Per Unit
$0.15
RFQ
1,155
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A eSMP® Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 4A 1.1V @ 4A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 2.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
S4PB-M3/87A
Per Unit
$0.14
RFQ
725
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 4A TO277A eSMP® Active Tape & Reel (TR) Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) Standard 4A 1.1V @ 4A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 2.5µs -55°C ~ 150°C 30pF @ 4V, 1MHz
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