- Series :
- Packaging :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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2,217
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Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 75V 2.3A 8SOIC | - | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.1W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 75V | 2.3A | 130 mOhm @ 3.1A, 10V | 3V @ 250µA | 7nC @ 10V | 380pF @ 30V | ||
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1,517
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Infineon Technologies | MOSFET 2P-CH 30V 2.3A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 250 mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | ||
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3,621
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Infineon Technologies | MOSFET 2P-CH 30V 2.3A 8-SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 250 mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V |
