- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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3,206
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Toshiba Semiconductor and Storage | MOSFET 2 N-CHANNEL 20V 1.6A UF6 | Active | - | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | 2 N-Channel (Dual) | Standard | 20V | 1.6A (Ta) | 119 mOhm @ 1A, 4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | |||
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816
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 500MA UF6 | Active | - | 150°C | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Standard | 30V | 500mA (Ta) | 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V | 1.1V @ 100µA | - | 245pF @ 10V, 218pF @ 10V |
