- Part Status :
- Package / Case :
- Drain to Source Voltage (Vdss) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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1,868
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Microsemi Corporation | MOSFET 6N-CH 1000V 22A SP6P | POWER MOS 7® | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 390W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||
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2,113
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Microsemi Corporation | MOSFET 2N-CH 500V 90A SP4 | POWER MOS 7® | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 694W | SP4 | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | |||
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3,823
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Microsemi Corporation | MOSFET 2N-CH 200V 104A SP3 | POWER MOS 7® | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 2 N-Channel (Dual) Asymmetrical | Standard | 200V | 104A | 19 mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | ||
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1,176
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Microsemi Corporation | MOSFET 2N-CH 1200V 17A SP3 | POWER MOS 7® | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 17A | 684 mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | ||
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1,127
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Microsemi Corporation | MOSFET 2N-CH 1000V 22A SP3 | POWER MOS 7® | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | ||
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3,941
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Microsemi Corporation | MOSFET 4N-CH 1000V 18A SP4 | POWER MOS 7® | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 357W | SP4 | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | |||
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2,805
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Microsemi Corporation | MOSFET 4N-CH 1200V 34A SP6 | POWER MOS 7® | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 780W | SP6 | 4 N-Channel (H-Bridge) | Standard | 1200V (1.2kV) | 34A | 348 mOhm @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | 10300pF @ 25V |
