Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
STS2DPF80
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RFQ
2,360
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STMicroelectronics MOSFET 2P-CH 80V 2A 8SOIC STripFET™ Obsolete Digi-Reel® 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2.5W 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2A 250 mOhm @ 1A, 10V 4V @ 250µA 20nC @ 10V 739pF @ 25V
STS2DPF80
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RFQ
3,595
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STMicroelectronics MOSFET 2P-CH 80V 2A 8SOIC STripFET™ Obsolete Cut Tape (CT) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2.5W 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2A 250 mOhm @ 1A, 10V 4V @ 250µA 20nC @ 10V 739pF @ 25V
STS2DPF80
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RFQ
3,293
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STMicroelectronics MOSFET 2P-CH 80V 2A 8SOIC STripFET™ Obsolete Tape & Reel (TR) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2.5W 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2A 250 mOhm @ 1A, 10V 4V @ 250µA 20nC @ 10V 739pF @ 25V
IRF9953TR
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RFQ
1,517
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
IRF9953
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RFQ
3,621
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
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