- Series :
- Part Status :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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2,471
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Microsemi Corporation | MOSFET 2N-CH 200V 208A SP6 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 781W | SP6 | 2 N-Channel (Dual) Asymmetrical | Standard | 200V | 208A | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | ||
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3,691
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Microsemi Corporation | MOSFET 6N-CH 600V 95A SP6-P | CoolMOS™ | Active | Tray | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 462W | SP6-P | 6 N-Channel (3-Phase Bridge) | Super Junction | 600V | 95A | 24 mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | |||
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1,124
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Microsemi Corporation | MOSFET 4N-CH 200V 208A SP6 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 781W | SP6 | 4 N-Channel (H-Bridge) | Standard | 200V | 208A | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V |
