- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,954
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Vishay Siliconix | MOSFET 2P-CH 20V 2.1A 6-TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 830mW | 6-TSOP | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.1A | 110 mOhm @ 2.5A, 4.5V | 1.1V @ 250µA | 7.5nC @ 4.5V | - | ||
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2,284
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Vishay Siliconix | MOSFET N/P-CH 20V 2.9A 6TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 830mW | 6-TSOP | N and P-Channel | Logic Level Gate | 20V | 2.9A, 2.1A | 60 mOhm @ 3.4A, 4.5V | 1.1V @ 250µA | 6nC @ 4.5V | - | ||
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GET PRICE |
1,122
Ships today + free overnight shipping
|
Vishay Siliconix | MOSFET N/P-CH 20V 2.9A 6-TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 830mW | 6-TSOP | N and P-Channel | Logic Level Gate | 20V | 2.9A, 2.1A | 60 mOhm @ 3.4A, 4.5V | 1.1V @ 250µA | 6nC @ 4.5V | - |
