- Part Status :
- Operating Temperature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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2,247
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Microsemi Corporation | MOSFET 2N-CH 500V 170A SP4 | - | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 1250W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 500V | 170A | 19 mOhm @ 85A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | ||
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2,348
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Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 694W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1000V (1kV) | 36A | 270 mOhm @ 18A, 10V | 5V @ 5mA | 308nC @ 10V | 8700pF @ 25V | ||
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3,858
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 2300W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10 mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | |||
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3,211
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Microsemi Corporation | MOSFET 2 N-CH 1200V 337A MODULE | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | |||
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1,224
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 714W | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 112A (Tc) | 33 mOhm @ 60A, 20V | 3V @ 3mA | 408nC @ 20V | 7680pF @ 1000V | |||
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3,373
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2140W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | |||
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968
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 937W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | |||
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3,794
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Microsemi Corporation | MOSFET 2N-CH 500V 150A SP6 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 1250W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 500V | 150A | 28 mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | 19600pF @ 25V | |||
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3,426
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | 470W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A, 20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V | |||
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2,613
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Microsemi Corporation | MOSFET 2N-CH 500V 90A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 694W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | |||
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1,708
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Microsemi Corporation | MOSFET 4N-CH 500V 46A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 357W | 4 N-Channel (H-Bridge) | Silicon Carbide (SiC) | 500V | 46A | 90 mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5590pF @ 25V |
