Power - Max :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI4931DY-T1-GE3
Per Unit
$1.04
RFQ
979
Ships today + free overnight shipping
Vishay Siliconix MOSFET 2P-CH 12V 6.7A 8SOIC TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.1W 8-SO 2 P-Channel (Dual) Logic Level Gate 12V 6.7A 18 mOhm @ 8.9A, 4.5V 1V @ 350µA 52nC @ 4.5V -
DMN3018SSD-13
Per Unit
$0.59
RFQ
2,148
Ships today + free overnight shipping
Diodes Incorporated MOSFET 2N-CH 30V 6.7A 8SO - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.5W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.7A 22 mOhm @ 10A, 10V 2.1V @ 250µA 13.2nC @ 10V 697pF @ 15V
SI4931DY-T1-E3
Per Unit
$1.08
RFQ
3,500
Ships today + free overnight shipping
Vishay Siliconix MOSFET 2P-CH 12V 6.7A 8-SOIC TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.1W 8-SO 2 P-Channel (Dual) Logic Level Gate 12V 6.7A 18 mOhm @ 8.9A, 4.5V 1V @ 350µA 52nC @ 4.5V -
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