- Manufacture :
- Series :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,435
Ships today + free overnight shipping
|
Microsemi Corporation | MOSFET 2N-CH 1700V 53A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 350W | SP1 | 2 N Channel (Phase Leg) | Standard | 1700V (1.7kV) | 53A | 60 mOhm @ 50A, 20V | 2.3V @ 2.5mA (Typ) | 190nC @ 20V | 3080pF @ 1000V | ||||
|
767
Ships today + free overnight shipping
|
IXYS | MOSFET 2N-CH 150V 53A I4-PAC | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | 180W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) | Standard | 150V | 53A | 20 mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V |