- Part Status :
- Packaging :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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659
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Infineon Technologies | MOSFET 2N-CH 30V 7.6A/11A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | |||
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2,508
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Infineon Technologies | MOSFET 2N-CH 30V 7.6A/11A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | ||
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3,201
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Infineon Technologies | MOSFET 2N-CH 30V 7.6A/11A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | |||
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2,444
Ships today + free overnight shipping
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Infineon Technologies | MOSFET 2N-CH 30V 7.6A/11A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V |
