Power - Max :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
AUIRF7304Q
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RFQ
3,386
Ships today + free overnight shipping
Infineon Technologies MOSFET 2P-CH 20V 4A 8SOIC HEXFET® Obsolete Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 20V 4.3A 90 mOhm @ 2.2A, 4.5V 1.5V @ 250µA 22nC @ 4.5V 610pF @ 15V
TPS1120D
Per Unit
$2.47
RFQ
682
Ships today + free overnight shipping
Texas Instruments MOSFET 2P-CH 15V 1.17A 8-SOIC - Active Tube -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 840mW 8-SOIC 2 P-Channel (Dual) Logic Level Gate 15V 1.17A 180 mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45nC @ 10V -
IRF7338PBF
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RFQ
2,130
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Infineon Technologies MOSFET N/P-CH 12V 6.3A/3A 8-SOIC HEXFET® Obsolete Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO N and P-Channel Logic Level Gate 12V 6.3A, 3A 34 mOhm @ 6A, 4.5V 1.5V @ 250µA 8.6nC @ 4.5V 640pF @ 9V
TPS1120DG4
Per Unit
$1.59
RFQ
3,846
Ships today + free overnight shipping
Texas Instruments MOSFET 2P-CH 15V 1.17A 8-SOIC - Active Tube -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 840mW 8-SOIC 2 P-Channel (Dual) Logic Level Gate 15V 1.17A 180 mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45nC @ 10V -
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