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- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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3,323
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Microsemi Corporation | MOSFET 2N-CH 800V 56A SP6 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 568W | 2 N-Channel (Half Bridge) | Standard | 800V | 56A | 75 mOhm @ 28A, 10V | 3.9V @ 4mA | 364nC @ 10V | 9015pF @ 25V | |||
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2,049
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Microsemi Corporation | MOSFET 2N-CH 600V 143A SP6 | CoolMOS™ | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 833W | 2 N-Channel (Half Bridge) | Standard | 600V | 143A | 18 mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | 28000pF @ 25V |
