- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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1,607
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Infineon Technologies | MOSFET 2P-CH 20V 3.9A 8TSSOP | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 1W | 8-TSSOP | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.9A | 51 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | ||
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2,746
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Vishay Siliconix | MOSFET N/P-CH 20V 6.6A 8SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SO | N and P-Channel, Common Drain | Logic Level Gate | 20V | 6.6A, 3.8A | 20 mOhm @ 9.1A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | - | ||
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3,407
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Vishay Siliconix | MOSFET N/P-CH 20V 6.6A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SO | N and P-Channel, Common Drain | Logic Level Gate | 20V | 6.6A, 3.8A | 20 mOhm @ 9.1A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | - | ||
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2,291
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Infineon Technologies | MOSFET 2P-CH 20V 3.9A 8TSSOP | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 1W | 8-TSSOP | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.9A | 51 mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 1090pF @ 15V | ||
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1,197
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ON Semiconductor | MOSFET 2N-CH 20V 7.5A 8SOIC | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7.5A | 18 mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 1333pF @ 10V | |||
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2,285
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ON Semiconductor | MOSFET 2P-CH 20V 3.6A 6MICROFET | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.6A | 60 mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 885pF @ 10V |
