- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
3,488
Ships today + free overnight shipping
|
Vishay Siliconix | MOSFET 2P-CH 20V 3.7A 1206-8 | TrenchFET® | Last Time Buy | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 2.8W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 3.7A | 144 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ||
|
|
688
Ships today + free overnight shipping
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
|
1,227
Ships today + free overnight shipping
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V |
