- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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1,727
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Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | OptiMOS™ | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ||
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2,418
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Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | OptiMOS™ | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ||
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1,411
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Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | OptiMOS™ | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ||
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2,395
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EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | - | Die | - | Die | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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1,289
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EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | - | Die | - | Die | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
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2,284
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EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | - | Die | - | Die | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
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963
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EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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1,024
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EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
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1,077
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EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
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1,612
Ships today + free overnight shipping
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Infineon Technologies | MOSFET 2N-CH 20V 1.5A 6TSOP | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP6-6 | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V |
