Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
EPC2103ENG
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RFQ
1,875
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EPC TRANS GAN 2N-CH 80V BUMPED DIE eGaN® Active Tray -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 80V 23A 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V
EPC2103
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RFQ
2,004
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EPC TRANS GAN SYMMETRICAL HALF BRIDG eGaN® Active Digi-Reel® -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 80V 28A 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V
EPC2103
Per Unit
$8.26
RFQ
3,538
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EPC TRANS GAN SYMMETRICAL HALF BRIDG eGaN® Active Cut Tape (CT) -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 80V 28A 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V
EPC2103
Per Unit
$4.97
RFQ
3,624
Ships today + free overnight shipping
EPC TRANS GAN SYMMETRICAL HALF BRIDG eGaN® Active Tape & Reel (TR) -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 80V 28A 5.5 mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V
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