Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRF7307QTRPBF
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RFQ
1,964
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Infineon Technologies MOSFET N/P-CH 20V 8SOIC HEXFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO N and P-Channel Logic Level Gate 20V 5.2A, 4.3A 50 mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V
IRF7301TRPBF
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RFQ
2,907
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Infineon Technologies MOSFET 2N-CH 20V 5.2A 8-SOIC HEXFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 20V 5.2A 50 mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V
SI4214DDY-T1-GE3
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RFQ
2,044
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Vishay Siliconix MOSFET 2N-CH 30V 8.5A 8-SOIC TrenchFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 3.1W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 8.5A 19.5 mOhm @ 8A, 10V 2.5V @ 250µA 22nC @ 10V 660pF @ 15V
IRF7307TRPBF
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RFQ
1,772
Ships today + free overnight shipping
Infineon Technologies MOSFET N/P-CH 20V 8-SOIC HEXFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO N and P-Channel Logic Level Gate 20V 5.2A, 4.3A 50 mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V
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