- Series :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
3,974
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|
Vishay Siliconix | MOSFET 2N-CH 30V 8A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 17.8W | PowerPAK® SO-8 Dual | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 21 mOhm @ 8A, 10V | 2.8V @ 250µA | 21nC @ 10V | 900pF @ 15V | ||
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2,394
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Texas Instruments | MOSFET 2N-CH 30V 20A 8SON | NexFET™ | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 6W | 8-LSON (3.3x3.3) | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 20A | - | 2.1V @ 250µA | 5.8nC @ 4.5V | 900pF @ 15V | ||
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1,640
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Infineon Technologies | MOSFET 2N-CH 20V 6.6A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | ||
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1,471
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Infineon Technologies | MOSFET N/P-CH 20V 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 20V | 6.6A, 5.3A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V |
