Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRF7341QTRPBF
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RFQ
3,094
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Infineon Technologies MOSFET 2N-CH 55V 5.1A 8-SOIC HEXFET® Obsolete Digi-Reel® -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2.4W 8-SO 2 N-Channel (Dual) Logic Level Gate 55V 5.1A 50 mOhm @ 5.1A, 10V 1V @ 250µA 44nC @ 10V 780pF @ 25V
AUIRF7341QTR
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RFQ
2,625
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Infineon Technologies MOSFET 2N-CH 55V 5.1A 8SOIC Automotive, AEC-Q101, HEXFET® Active Digi-Reel® -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2.4W 8-SO 2 N-Channel (Dual) Logic Level Gate 55V 5.1A 50 mOhm @ 5.1A, 10V 3V @ 250µA 44nC @ 10V 780pF @ 25V
DMNH6042SSDQ-13
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RFQ
871
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Diodes Incorporated MOSFET BVDSS: 41V 60V SO-8 T&R 2 Automotive, AEC-Q101 Active Digi-Reel® -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2.1W 8-SO 2 N-Channel (Dual) Standard 60V 16.7A (Tc) 50 mOhm @ 5.1A, 10V 3V @ 250µA 4.2nC @ 4.5V 584pF @ 25V
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