Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
981
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 28A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die 202W (Tj) N-Channel - 1200V 28A (Tj) 220 mOhm @ 10A, 20V 4V @ 1mA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V
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2,348
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 50A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die 313mW (Tj) N-Channel - 1200V 50A (Tj) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
CMF20120D
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RFQ
783
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Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 215W (Tc) N-Channel - 1200V 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
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