Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP2M010A060H
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RFQ
2,750
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Global Power Technologies Group MOSFET N-CH 600V 10A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 198W (Tc) N-Channel 600V 10A (Tc) 700 mOhm @ 5A, 10V 5V @ 250µA 35nC @ 10V 1660pF @ 25V 10V ±30V
GP1M011A050HS
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RFQ
3,644
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Global Power Technologies Group MOSFET N-CH 500V 10A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 158W (Tc) N-Channel 500V 10A (Tc) 700 mOhm @ 5A, 10V 3.5V @ 250µA 28nC @ 10V 1546pF @ 25V 10V ±30V
GP1M011A050FSH
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RFQ
3,090
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Global Power Technologies Group MOSFET N-CH 500V 10A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 51.4W (Tc) N-Channel 500V 10A (Tc) 700 mOhm @ 5A, 10V 3.5V @ 250µA 28nC @ 10V 1546pF @ 25V 10V ±30V
GP2M010A060F
Per Unit
$2.15
RFQ
3,468
Ships today + free overnight shipping
Global Power Technologies Group MOSFET N-CH 600V 10A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 52W (Tc) N-Channel 600V 10A (Tc) 700 mOhm @ 5A, 10V 5V @ 250µA 35nC @ 10V 1660pF @ 25V 10V ±30V
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