Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$21.76
RFQ
1,074
Ships today + free overnight shipping
IXYS MOSFET N-CH 800V 25A ISO264 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISO264™ ISO264™ 250W (Tc) N-Channel - 800V 25A (Tc) 150 mOhm @ 9A, 10V 4V @ 2mA 166nC @ 10V - 10V ±20V
IXKH47N60C
Per Unit
$14.72
RFQ
2,910
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 47A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXKH) - N-Channel Super Junction 600V 47A (Tc) 70 mOhm @ 30A, 10V 4V @ 2mA 650nC @ 10V - 10V ±20V
IXKR25N80C
Per Unit
$14.26
RFQ
1,249
Ships today + free overnight shipping
IXYS MOSFET N-CH 800V 25A ISOPLUS247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 355nC @ 10V - 10V ±20V
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Per Unit
$13.76
RFQ
1,927
Ships today + free overnight shipping
IXYS MOSFET N-CH 800V 25A ISOPLUS220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 180nC @ 10V 4600pF @ 25V 10V ±20V
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