Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN40N110Q3
Per Unit
$36.32
RFQ
3,504
Ships today + free overnight shipping
IXYS MOSFET N-CH 1100V 35A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 960W (Tc) N-Channel - 1100V 35A (Tc) 260 mOhm @ 20A, 10V 6.5V @ 8mA 300nC @ 10V 14000pF @ 25V 10V ±30V
IXFB40N110Q3
Per Unit
$36.08
RFQ
604
Ships today + free overnight shipping
IXYS MOSFET N-CH 1100V 40A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1560W (Tc) N-Channel - 1100V 40A (Tc) 260 mOhm @ 20A, 10V 6.5V @ 8mA 300nC @ 10V 14000pF @ 25V 10V ±30V
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