Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFA18N60X
Per Unit
$5.38
RFQ
1,503
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 18A TO-263AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AA 320W (Tc) N-Channel 600V 18A (Tc) 230 mOhm @ 9A, 10V 4.5V @ 1.5mA 35nC @ 10V 1440pF @ 25V 10V ±30V
IXFA38N30X3
Per Unit
$4.49
RFQ
2,841
Ships today + free overnight shipping
IXYS FET N-CHANNEL HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 240W (Tc) N-Channel 300V 38A (Tc) 50 mOhm @ 19A, 10V 4.5V @ 1mA 35nC @ 10V 2240pF @ 25V 10V ±20V
IXTA20N65X
Per Unit
$7.19
RFQ
3,760
Ships today + free overnight shipping
IXYS MOSFET N-CH 650V 20A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 320W (Tc) N-Channel 650V 20A (Tc) 210 mOhm @ 10A, 10V 5.5V @ 250µA 35nC @ 10V 1390pF @ 25V 10V ±30V
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