Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA200N085T
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RFQ
2,532
Ships today + free overnight shipping
IXYS MOSFET N-CH 85V 200A TO-263 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 480W (Tc) N-Channel - 85V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 152nC @ 10V 7600pF @ 25V 10V ±20V
IXTA200N075T
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RFQ
1,415
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IXYS MOSFET N-CH 75V 200A TO-263 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 430W (Tc) N-Channel - 75V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 160nC @ 10V 6800pF @ 25V 10V ±20V
IXTA200N055T2
Per Unit
$2.95
RFQ
2,888
Ships today + free overnight shipping
IXYS MOSFET N-CH 55V 200A TO-263 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 360W (Tc) N-Channel - 55V 200A (Tc) 4.2 mOhm @ 50A, 10V 4V @ 250µA 109nC @ 10V 6800pF @ 25V 10V ±20V
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