Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA1R4N120P
Per Unit
$3.35
RFQ
2,133
Ships today + free overnight shipping
IXYS MOSFET N-CH 1200V 1.4A TO-263 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 86W (Tc) N-Channel - 1200V 1.4A (Tc) 13 Ohm @ 500mA, 10V 4.5V @ 100µA 24.8nC @ 10V 666pF @ 25V 10V ±20V
IXTA2N100P
Per Unit
$2.32
RFQ
1,554
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 2A TO-263 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 86W (Tc) N-Channel - 1000V 2A (Tc) 7.5 Ohm @ 500mA, 10V 4.5V @ 100µA 24.3nC @ 10V 655pF @ 25V 10V ±20V
IXTA1R6N100D2HV
Per Unit
$2.67
RFQ
2,205
Ships today + free overnight shipping
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263HV 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tj) 10 Ohm @ 800mA, 0V 4.5V @ 100µA 27nC @ 5V 645pF @ 10V 0V ±20V
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