Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA6N100D2
Per Unit
$6.31
RFQ
3,654
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 6A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 300W (Tc) N-Channel Depletion Mode 1000V 6A (Tc) 2.2 Ohm @ 3A, 0V - 95nC @ 5V 2650pF @ 25V - ±20V
IXTA60N10T
Per Unit
$1.98
RFQ
3,814
Ships today + free overnight shipping
IXYS MOSFET N-CH 100V 60A TO-263 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 176W (Tc) N-Channel - 100V 60A (Tc) 18 mOhm @ 25A, 10V 4.5V @ 50µA 49nC @ 10V 2650pF @ 25V 10V ±30V
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