Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA1N80
Per Unit
$2.06
RFQ
2,748
Ships today + free overnight shipping
IXYS MOSFET N-CH 800V 750MA TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 40W (Tc) N-Channel 800V 750mA (Tc) 11 Ohm @ 500mA, 10V 4.5V @ 25µA 8.5nC @ 10V 220pF @ 25V 10V ±20V
IXTA05N100
Per Unit
$3.47
RFQ
1,891
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 0.75A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 40W (Tc) N-Channel 1000V 750mA (Tc) 17 Ohm @ 375mA, 10V 4.5V @ 250µA 7.8nC @ 10V 260pF @ 25V 10V ±30V
IXTA05N100HV
Per Unit
$3.47
RFQ
3,530
Ships today + free overnight shipping
IXYS MOSFET N-CH 1KV 750MA TO263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 40W (Tc) N-Channel 1000V 750mA (Tc) 17 Ohm @ 375mA, 10V 4.5V @ 250µA 7.8nC @ 10V 260pF @ 25V 10V ±30V
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