Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFV18N90P
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2,410
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IXYS MOSFET N-CH 900V 18A PLUS220 HiPerFET™, PolarP2™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 540W (Tc) N-Channel - 900V 18A (Tc) 600 mOhm @ 500mA, 10V 6.5V @ 1mA 97nC @ 10V 5230pF @ 25V 10V ±30V
IXFV12N90P
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2,278
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IXYS MOSFET N-CH 900V 12A PLUS220 HiPerFET™, PolarP2™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 380W (Tc) N-Channel - 900V 12A (Tc) 900 mOhm @ 6A, 10V 6.5V @ 1mA 56nC @ 10V 3080pF @ 25V 10V ±30V
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