Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
2,354
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IXYS POWER MOSFET TO-3 - Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-204AA 180W (Tc) N-Channel - 900V 6A (Tc) 1.4 Ohm @ 3A, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
IXTH6N90A
Per Unit
$8.52
RFQ
853
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IXYS MOSFET N-CH 900V 6A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 180W (Tc) N-Channel - 900V 6A (Tc) 1.4 Ohm @ 3A, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
IXTH6N90
Per Unit
$7.76
RFQ
1,429
Ships today + free overnight shipping
IXYS MOSFET N-CH 900V 6A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 180W (Tc) N-Channel - 900V 6A (Tc) 1.8 Ohm @ 500mA, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
IXTH12N90
Per Unit
$12.61
RFQ
2,068
Ships today + free overnight shipping
IXYS MOSFET N-CH 900V 12A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel - 900V 12A (Tc) 900 mOhm @ 6A, 10V 4.5V @ 250µA 170nC @ 10V 4500pF @ 25V 10V ±20V
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