- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,723
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IXYS | MOSFET N-CH 800V 11A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | 166W (Tc) | N-Channel | - | 800V | 11A (Tc) | 500 mOhm @ 10A, 10V | 5V @ 4mA | 85nC @ 10V | 4680pF @ 25V | 10V | ±30V | |||
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3,599
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IXYS | MOSFET N-CH 800V 11A ISOPLUS247 | HiPerFET™, PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | 166W (Tc) | N-Channel | - | 800V | 11A (Tc) | 500 mOhm @ 10A, 10V | 5V @ 4mA | 85nC @ 10V | 4680pF @ 25V | 10V | ±30V | ||||
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3,421
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IXYS | MOSFET N-CH 1000V 11A ISOPLUS247 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | 230W (Tc) | N-Channel | - | 1000V | 11A (Tc) | 640 mOhm @ 10A, 10V | 6.5V @ 1mA | 126nC @ 10V | 7300pF @ 25V | 10V | ±30V |