Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFK90N20Q
Per Unit
$18.00
RFQ
2,869
Ships today + free overnight shipping
IXYS MOSFET N-CH 200V 90A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 200V 90A (Tc) 22 mOhm @ 45A, 10V 4V @ 4mA 190nC @ 10V 6800pF @ 25V 10V ±20V
IXFK90N30
Per Unit
$17.34
RFQ
2,863
Ships today + free overnight shipping
IXYS MOSFET N-CH 300V 90A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 560W (Tc) N-Channel - 300V 90A (Tc) 33 mOhm @ 45A, 10V 4V @ 8mA 360nC @ 10V 10000pF @ 25V 10V ±20V
IXFK90N20
Per Unit
$18.00
RFQ
3,551
Ships today + free overnight shipping
IXYS MOSFET N-CH 200V 90A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 200V 90A (Tc) 23 mOhm @ 45A, 10V 4V @ 8mA 380nC @ 10V 9000pF @ 25V 10V ±20V
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