Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFR30N60P
Per Unit
$8.35
RFQ
2,672
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 15A ISOPLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 166W (Tc) N-Channel - 600V 15A (Tc) 250 mOhm @ 15A, 10V 5V @ 4mA 85nC @ 10V 3820pF @ 25V 10V ±30V
IXFC30N60P
GET PRICE
RFQ
1,665
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 15A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 166W (Tc) N-Channel - 600V 15A (Tc) 250 mOhm @ 15A, 10V 5V @ 4mA 85nC @ 10V 3820pF @ 25V 10V ±30V
IXFC26N50P
GET PRICE
RFQ
790
Ships today + free overnight shipping
IXYS MOSFET N-CH 500V 15A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 130W (Tc) N-Channel - 500V 15A (Tc) 260 mOhm @ 13A, 10V 5.5V @ 4mA 65nC @ 10V 3600pF @ 25V 10V ±30V
Page 1 / 1