Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFR120N20
Per Unit
$17.19
RFQ
3,292
Ships today + free overnight shipping
IXYS MOSFET N-CH 200V 105A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 417W (Tc) N-Channel - 200V 105A (Tc) 17 mOhm @ 60A, 10V 4V @ 8mA 360nC @ 10V 9100pF @ 25V 10V ±20V
IXFR150N15
Per Unit
$17.13
RFQ
1,929
Ships today + free overnight shipping
IXYS MOSFET N-CH 150V 105A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 400W (Tc) N-Channel - 150V 105A (Tc) 12.5 mOhm @ 75A, 10V 4V @ 8mA 360nC @ 10V 9100pF @ 25V 10V ±20V
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