- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,807
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 1KV 9.5A ISOPLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 200W (Tc) | N-Channel | - | 1000V | 9.5A (Tc) | 1.1 Ohm @ 7A, 10V | 5V @ 4mA | 83nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
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3,433
Ships today + free overnight shipping
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IXYS | MOSFET N-CH 850V 9.5A TO247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | ISO TO-247-3 | 110W (Tc) | N-Channel | - | 850V | 9.5A (Tc) | 360 mOhm @ 10A, 10V | 5.5V @ 2.5mA | 63nC @ 10V | 1660pF @ 25V | 10V | ±30V |
