- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,397
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IXYS | MOSFET N-CH 75V 250A PLUS220SMD | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD | 550W (Tc) | N-Channel | - | 75V | 250A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | 10V | ±20V | ||
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3,964
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|
IXYS | MOSFET N-CH 75V 250A PLUS220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3, Short Tab | PLUS220 | 550W (Tc) | N-Channel | - | 75V | 250A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | 10V | ±20V | ||
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1,940
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|
IXYS | MOSFET N-CH 75V 250A TO-3P | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 550W (Tc) | N-Channel | - | 75V | 250A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | 10V | ±20V | ||
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1,231
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IXYS | MOSFET N-CH 55V 180A TO-3P | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | - | N-Channel | - | 55V | 180A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 160nC @ 10V | 5800pF @ 25V | - | - | ||
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3,866
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IXYS | MOSFET N-CH 75V 250A TO-247 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 550W (Tc) | N-Channel | - | 75V | 250A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | 10V | ±20V | ||
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3,582
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IXYS | MOSFET N-CH 55V 160A ISOPLUS I4 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 200W (Tc) | N-Channel | - | 55V | 160A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | 10V | ±20V | ||
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1,673
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IXYS | MOSFET N-CH 55V 132A ISOPLUS220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 150W (Tc) | N-Channel | - | 55V | 132A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 170nC @ 10V | 7600pF @ 25V | 10V | ±20V |
