Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFK21N100Q
Per Unit
$18.89
RFQ
2,651
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 21A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 170nC @ 10V 6900pF @ 25V 10V ±20V
IXFX21N100Q
Per Unit
$18.64
RFQ
3,219
Ships today + free overnight shipping
IXYS MOSFET N-CH 1000V 21A PLUS 247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 170nC @ 10V 6900pF @ 25V 10V ±20V
IXFR21N100Q
Per Unit
$17.61
RFQ
3,939
Ships today + free overnight shipping
IXYS MOSFET N-CH 1KV 18A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 350W (Tc) N-Channel - 1000V 18A (Tc) 500 mOhm @ 10.5A, 10V 5V @ 4mA 170nC @ 10V 5900pF @ 25V 10V ±20V
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