Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTH32N65X
Per Unit
$5.16
RFQ
2,210
Ships today + free overnight shipping
IXYS MOSFET N-CH 650V 32A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 500W (Tc) N-Channel 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
IXTQ32N65X
Per Unit
$4.75
RFQ
2,898
Ships today + free overnight shipping
IXYS MOSFET N-CH 650V 32A TO-3P - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 500W (Tc) N-Channel 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
IXTP32N65XM
Per Unit
$4.33
RFQ
623
Ships today + free overnight shipping
IXYS MOSFET N-CH 650V 14A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 78W (Tc) N-Channel 650V 14A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2206pF @ 25V 10V ±30V
IXTP32N65X
Per Unit
$4.28
RFQ
3,088
Ships today + free overnight shipping
IXYS MOSFET N-CH 650V 32A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 500W (Tc) N-Channel 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
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