Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTP10N60PM
Per Unit
$2.35
RFQ
1,955
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 5A TO-220 PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel - 600V 5A (Tc) 740 mOhm @ 5A, 10V 5V @ 100µA 32nC @ 10V 1610pF @ 25V 10V ±30V
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RFQ
1,259
Ships today + free overnight shipping
IXYS MOSFET N-CH 600V 10A I2-PAK PolarHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 (I2PAK) 200W (Tc) N-Channel - 600V 10A (Tc) 740 mOhm @ 5A, 10V 5V @ 100µA 32nC @ 10V 1610pF @ 25V 10V ±30V
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