Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
3,833
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IXYS MOSFET N-CH 300V 35A TO247AD HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 300V 35A (Tc) 100 mOhm @ 17.5A, 10V 4V @ 4mA 200nC @ 10V 4800pF @ 25V 10V ±20V
IXFH35N30
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RFQ
2,562
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IXYS MOSFET N-CH 300V 35A TO-247AD HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 300V 35A (Tc) 100 mOhm @ 500mA, 10V 4V @ 4mA 200nC @ 10V 4800pF @ 25V 10V ±20V
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RFQ
1,473
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IXYS POWER MOSFET TO-3 HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE 300W (Tc) N-Channel - 300V 35A (Tc) 100 mOhm @ 17.5A, 10V 4V @ 4mA 200nC @ 10V 4800pF @ 25V 10V ±20V
IXFK35N50
Per Unit
$18.87
RFQ
793
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IXYS MOSFET N-CH 500V 35A TO-264AA HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 416W (Tc) N-Channel - 500V 35A (Tc) 150 mOhm @ 16.5A, 10V 4V @ 4mA 227nC @ 10V 5700pF @ 25V 10V ±20V
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