Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFJ32N50Q
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RFQ
969
Ships today + free overnight shipping
IXYS MOSFET N-CH 500V 32A TO-220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3, Short Tab TO-268 360W (Tc) N-Channel - 500V 32A (Tc) 150 mOhm @ 16A, 10V 4V @ 4mA 153nC @ 10V 3950pF @ 25V 10V ±20V
IXFR30N50Q
Per Unit
$11.92
RFQ
1,928
Ships today + free overnight shipping
IXYS MOSFET N-CH 500V 30A ISOPLUS247 HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 310W (Tc) N-Channel - 500V 30A (Tc) 160 mOhm @ 15A, 10V 4V @ 4mA 150nC @ 10V 3950pF @ 25V 10V ±20V
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