Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,111
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IXYS MOSFET N-CH 800V 7A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 120W (Tc) N-Channel - 800V 7A (Tc) 930 mOhm @ 6A, 10V 5.5V @ 2.5mA 51nC @ 10V 2800pF @ 25V 10V ±30V
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3,762
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IXYS MOSFET N-CH 600V 8A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 125W (Tc) N-Channel - 600V 8A (Tc) 630 mOhm @ 7A, 10V 5.5V @ 2.5mA 36nC @ 10V 2500pF @ 25V 10V ±30V
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3,448
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IXYS MOSFET N-CH 500V 10A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 125W (Tc) N-Channel - 500V 10A (Tc) 450 mOhm @ 8A, 10V 5.5V @ 2.5mA 43nC @ 10V 2250pF @ 25V 10V ±30V
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