Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,045
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IXYS MOSFET N-CH 800V 12A PLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 360W (Tc) N-Channel - 800V 12A (Tc) 850 mOhm @ 500mA, 10V 5.5V @ 2.5mA 51nC @ 10V 2800pF @ 25V 10V ±30V
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1,891
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IXYS MOSFET N-CH 600V 18A PLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 360W (Tc) N-Channel - 600V 18A (Tc) 400 mOhm @ 500mA, 10V 5.5V @ 2.5mA 50nC @ 10V 2500pF @ 25V 10V ±30V
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2,115
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IXYS MOSFET N-CH 500V 22A PLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V 2630pF @ 25V 10V ±30V
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