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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,336
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IXYS POWER MOSFET TO-3 GigaMOS™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE 300W (Tc) N-Channel 100V 67A (Tc) 25 mOhm @ 33.5A, 10V 4V @ 4mA 260nC @ 10V 4500pF @ 25V 10V ±20V
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630
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IXYS POWER MOSFET TO-3 HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE 300W (Tc) N-Channel 100V 67A (Tc) 25 mOhm @ 33.5A, 10V 4V @ 4mA 260nC @ 10V 4500pF @ 25V 10V ±20V
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