Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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765
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IXYS MOSFET N-CH 500V 12A ISOPLUS220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 140W (Tc) N-Channel - 500V 12A (Tc) 400 mOhm @ 6.5A, 10V 4V @ 2.5mA 120nC @ 10V 2800pF @ 25V 10V ±20V
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1,591
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IXYS MOSFET N-CH 500V 12A ISOPLUS220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 140W (Tc) N-Channel - 500V 12A (Tc) 400 mOhm @ 6.5A, 10V 4V @ 2.5mA 120nC @ 10V 2800pF @ 25V 10V ±20V
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1,111
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IXYS MOSFET N-CH 800V 7A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 120W (Tc) N-Channel - 800V 7A (Tc) 930 mOhm @ 6A, 10V 5.5V @ 2.5mA 51nC @ 10V 2800pF @ 25V 10V ±30V
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